Converter: pressure | Range of val.cntrl: 4 bar | 9÷32VDC | 0.5%
Thyristor: hockey-puck | 1.6kV | 1.2kA | Igt: 250mA | B14 (D74x26)
Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 300A | SEMITRANS4
Electromagnetic valve | G 3/4" | brass | EPDM | EV220B | Valve: 2/2 NC
Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 400A | SEMITRANS4
Converter: pressure | Range of val.cntrl: 60 bar | 9÷32VDC | 0.5%
Converter: pressure | Range of val.cntrl: 160 bar | 9÷32VDC | 0.5%
Converter: pressure | Range of val.cntrl: 250 bar | 9÷32VDC | 0.5%
Converter: pressure | Range of val.cntrl: 400 bar | 9÷32VDC | 0.5%
Module: diode | double series | 1.8kV | If: 380A | SEMIPACK3 | A78b | 600A
VOŽTUVAS TERM VANDENS AVTA 15 G 1/2
Pristatymo laikas: 7-12 d.d.
Module: IGBT | transistor/transistor | Urmax: 1.2kV | Ic: 324A | D56
SOLENOID VALVE EV220B 40B G 112E NC000
Pristatymo laikas: 7-9 d.d.
Module: thyristor | double series | 1.2kV | 330A | Ifmax: 510A | A73b
Module: IGBT | diode/transistor | boost chopper | Urmax: 1.2kV | screw
Module: thyristor | double series | 1.6kV | 330A | Ifmax: 510A | A73b



