MICROCHIP (1732)
Module | single transistor | 300V | 130A | ISOTOP | Ugs: ±30V | screw
Transistor: N-MOSFET | SiC | unipolar | 700V | 89A | Idm: 315A | 370W | SMA
Module: diode | double independent | 400V | If: 60Ax2 | SOT227B | screw
Bridge rectifier: single-phase | Urmax: 600V | If: 60A | Ifsm: 500A
Transistor: N-MOSFET | SiC | unipolar | 700V | 99A | Idm: 350A | 400W | SMA
Bridge rectifier: single-phase | Urmax: 200V | If: 60A | Ifsm: 500A
Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 29A | SOT227B
Transistor: N-MOSFET | POWER MOS 5® | unipolar | 1kV | 21A | Idm: 84A
Dev.kit: MiWi | IEEE 802.15.4 | MiWi | 2.4GHz | Flash: 128kB
Programmer: microcontrollers | AVR,dsPIC,PIC,SAM MCU,SAM MPU
Transistor: N-MOSFET | POWER MOS 5® | unipolar | 1kV | 21A | Idm: 84A
Diode: transil | 30kW | 86.7÷95.8V | 240A | unidirectional | PLAD


