MICROSEMI (112)
Transistor: N-MOSFET | unipolar | 600V | 19A | Idm: 89A | 219W | TO247-3
Diode: Schottky rectifying | THT | 200V | 2x45A | TO247-3 | Ufmax: 0.91V
Diode: transil | 1.5kW | 26.7V | 15.4A | unidirectional | ±5% | DO214AB
Transistor: N-MOSFET | unipolar | 300V | 44A | Idm: 176A | 329W | TO247-3
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 46A | Idm: 105A | 323W
Transistor: N-MOSFET | unipolar | 800V | 29A | Idm: 173A | 1135W | TO264
Transistor: N-MOSFET | unipolar | 800V | 26A | Idm: 150A | 1.04kW
Diode: transil | 30kW | 86.7÷95.8V | 240A | unidirectional | PLAD
Transistor: N-MOSFET | POWER MOS 5® | unipolar | 1kV | 11A | Idm: 44A
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 45A | Idm: 159A | 303W
Bridge rectifier: single-phase | Urmax: 600V | If: 60A | Ifsm: 500A

