Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 85A | Idm: 250A | 340W
Module: IGBT | diode/transistor | boost chopper | Urmax: 650V | Ic: 10A
Module: diode | double independent | 150V | If: 160Ax2 | SOT227B | screw
Module: diode | double independent | 650V | If: 25Ax2 | SOT227B | screw
Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | L2.2
Module: diode | double independent | 650V | If: 2x100A | SOT227B | screw
Silicon Sieges: How Semiconductors Became the New Oil
Module | single transistor | 1.2kV | 25A | SOT227B | screw | screw | SiC
Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | F1.1
Module: diode | double independent | 650V | If: 2x50A | SOT227B | screw
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 90A | Idm: 240A | 542W
Module | single transistor | 150V | 180A | SOT227B | screw | screw | 320W
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 43A | Idm: 160A | 438W
Module | single transistor | 60V | 300A | SOT227B | screw | screw



